PHOTOELECTRIC CONVERSION DEVICE

PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having a high photoelectric conversion efficiency that can reduce manufacturing failure of a collector electrode.SOLUTION: In a photoelectric conversion device 11 having a substrate 1, a first lower electrode layer 2a, a second lower electrode layer 2b and a third lower electrode layer 2c which are provided on the substrate 1 and arranged along one direction to be spaced from on one another, a first lamination portion 7a which is provided from the upper side of the first lower electrode layer 2a to the upper side of the second lower electrode layer 2b and in which a first semiconductor layer 3a of a first conduction type and a second conduction layer 6a of a second conduction type are successively laminated in this order, a second lamination portion 7b which is provided from the upper side of the second lower electrode layer 2b to the upper side of the third lower electrode layer 2c so as to be aligned with the first lamination portion 7a along one side and spaced from the first lamination portion 7a and in which a third semiconductor layer 3b of the first conduction type and a fourth semiconductor layer 6b of the second conduction type are successively laminated in this order, and a belt-like collector electrode 9b which is provide from the end portion at the first lower electrode layer 2a side on the upper surface of the second lamination portion 7b to the end portion on the upper side of the third lower electrode layer 2c, the collector electrode 9b is configured so that the area of the section vertical to a current lead-out direction is smaller around the end portion at the first lower electrode layer 2a side.SELECTED DRAWING: Figure 1 【課題】 集電電極の作製不良を低減することが可能な、光電変換効率の高い光電変換装置を提供する。【解決手段】 基板１と、基板１上に設けられ、互いに間を空けて一方向に沿って並んだ第１下部電極層２ａ、第２下部電極層２ｂおよび第３下部電極層２ｃと、第１下部電極層２ａ上から第２下部電極層２ｂ上にかけて設けられた、第１導電型の第１半導体層３ａおよび第２導電型の第２半導体層６ａが順に積層されている第１積層部７ａと、第１積層部７ａと間を空けて一方向に沿って並ぶように第２下部電極層２ｂ上から第３下部電極層２ｃ上にかけて設けられた、第１導電型の第３半導体層３ｂおよび第２導電型の第４半導体層６ｂが順に積層されている第２積層部７ｂと、第２積層部７ｂの上面の第１下部電極層２ａ側の端部から第３下部電極層２ｃ上の端部にかけて設けられた帯状の集電電極９ｂとを具備している光電変換装置１１において、集電電極９ｂは、電流導出方向に垂直な断面の面積が、第１下部電極層２ａ側の端部の周辺で小さくなっている。【選択図】 図１