METHOD FOR CONTROLLING WAFER AND THIN FILM TEMPERATURE

PROBLEM TO BE SOLVED: To provide a vapor deposition system and a wafer thereof, and a method for controlling a thin film temperature.SOLUTION: A susceptor makes revolution around an axis and the susceptor includes a plurality of wafer holders each of which carries a wafer and rotates about its own axis. Process gas approaches a first surface of the wafer and is subjected to a heating reaction to form a thin film to be grown on the first surface. An isothermal plate is placed at a second surface of the wafer, the second surface facing the first surface. One or more temperature measuring instruments are used to measure a temperature of an opposite surface of the isothermal plate, the opposite surface facing the wafer. A wafer-end temperature of the wafer is calculated by a temperature of the opposite surface.SELECTED DRAWING: Figure 1 【課題】気相成長システム及びそのウエハー、並びに薄膜温度の制御方法を提供する。【解決手段】サセプタが軸の周りを回転させ、前記サセプタはウエハーをそれぞれ載置させると共に自転を行う複数のウエハー載置器を備える。プロセスガスは前記ウエハーに近接される第一表面が加熱反応を経て薄膜が形成されて前記第一表面上で成長する。等温平板は前記ウエハーの第一表面に対向する第二表面に設置される。１つ或いは複数の温度測定器は前記等温平板の前記ウエハーに対向する反対面の温度の獲得に使用される。前記反対面の温度から前記ウエハーのウエハー端の温度を推測する。【選択図】図１