METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ION IMPLANTATION DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and an ion implantation device capable of suppressing human errors in ion implantation resumed after interruption.SOLUTION: A method includes a step S16 of measuring a physical quantity that corresponds to a state of a photoresist film arranged on a first semiconductor substrate and provided with an opening and that is changed by first ion implantation to the first semiconductor substrate via the photoresist film. In a case where the measured physical quantity satisfies a first condition (S18:YES), first ion implantation S22a is performed to the first semiconductor substrate, and a later step S24 different from the first ion implantation is performed to the first semiconductor substrate after the first ion implantation. In a case where the measured physical quantity does not satisfy the first condition (S18:NO), the later step S24 is performed to the first semiconductor substrate without performing the first ion implantation.SELECTED DRAWING: Figure 9 【課題】中断後に再開されるイオン注入における人為的ミスを抑制する半導体装置の製造方法及びイオン注入装置を提供する。【解決手段】第１半導体基板上に配置され開口が設けられたフォトレジスト膜の状態に対応しフォトレジスト膜を介する第１半導体基板への第１イオン注入により変化する物理量を測定する工程Ｓ１６を有する。測定された物理量が第１条件を満たす場合（Ｓ１８：ＹＥＳ）に、第１半導体基板に第１イオン注入Ｓ２２ａを行い、第１イオン注入後に第１イオン注入とは異なる後工程Ｓ２４を第１半導体基板に対して行う。測定された物理量が第１条件を満たさない場合（Ｓ１８：ＮＯ）には、第１イオン注入を行わずに第１半導体基板に対して後工程Ｓ２４を行う。【選択図】図９