MANUFACTURING METHOD OF HEAT INSULATION PIPE, FORMING METHOD OF HEAT INSULATION FILM, HEAT INSULATION PIPE AND HEAT INSULATION FILM
PROBLEM TO BE SOLVED: To provide a manufacturing method of a heat insulation pipe having an excellent heat insulation characteristic by a comparatively simple technique, a forming method of a heat insulation film, the heat insulation pipe and the heat insulation film.SOLUTION: A pipe body 1 which is...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng ; jpn |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a manufacturing method of a heat insulation pipe having an excellent heat insulation characteristic by a comparatively simple technique, a forming method of a heat insulation film, the heat insulation pipe and the heat insulation film.SOLUTION: A pipe body 1 which is an object to be formed with a heat insulation film is accommodated in a furnace 10. Then, an electric charge is imparted to a hollow or porous silica particle that is a raw material for forming the heat insulation film, and a potential difference is imparted between the silica particle and the pipe body 1. Then, the silica particle imparted with the electric charge is injected to a heat insulation film forming face of the pipe body 1 which is accommodated in the furnace 10. A process in which the silica particle is injected includes a process in which a surface of the heat insulation film in formation is set at a temperature at which low-temperature type quartz (α-quartz) stably exists, and the inside of the heat insulation film in formation is set at a temperature at which high-temperature type quartz (β-quartz) stably exists.SELECTED DRAWING: Figure 1
【課題】比較的容易な手法により、優れた断熱特性を有する、断熱管の製造方法、断熱膜の製造方法、断熱管及び断熱膜を提供する。【解決手段】断熱膜形成対象の管体1が炉10内に収容される。次いで、断熱膜を構成する原料である中空又は多孔質のシリカ粒子に電荷が付与されるとともに、シリカ粒子と管体1との間に電位差が付与される。そして、炉10内に収容された管体1の断熱膜形成面に、電荷が付与されたシリカ粒子が噴射される。シリカ粒子が噴射される工程は、形成中の断熱膜の表面が、低温型石英(α−石英)が安定して存在する温度とされ、形成中の断熱膜の内部が、高温型石英(β−石英)が安定して存在する温度にされる工程を含む。【選択図】図1 |
---|