SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To accurately control warpage of a substrate.SOLUTION: A substrate manufacturing method comprises a first process of irradiating on a single crystal substrate, laser beams or charged particle radiation and moving the radiation region on the single crystal substrate so as to make trajectories of the irradiation region on a surface of the single crystal substrate draw straight line stripes to form an amorphous region along the trajectories. The first process is performed a plurality of times so as to make directions of the straight lines become different from each other. By performing the first process the plurality of times, warpage of the single crystal substrate varies and all of the straight lines in the first process performed the plurality of times are not parallel with a direction of a crystal axis of the single crystal substrate in a plane parallel with the above-mentioned surface.SELECTED DRAWING: Figure 4 【課題】基板の反りを正確に制御する。【解決手段】 基板の製造方法であって、単結晶基板にレーザまたは荷電粒子線を照射しながら、前記単結晶基板の表面における照射領域の軌跡が直線の縞状となるように前記照射領域を前記単結晶基板に対して移動させることで、前記軌跡に沿って非晶質領域を形成する第１工程を有し、前記第１工程は、前記直線の向きが異なるように複数回実施され、前記第１工程が複数回実施されることによって、前記単結晶基板の反りが変化し、複数回実施される前記第１工程の各々における前記直線の全てが、前記表面と平行な平面内における前記単結晶基板の結晶軸の方向と平行ではない。【選択図】図４