NONMAGNETIC GARNET SINGLE CRYSTAL SUBSTRATE, MAGNETIC GARNET SINGLE CRYSTAL FILM AND OPTICAL ELEMENT
PROBLEM TO BE SOLVED: To provide a nonmagnetic garnet single crystal substrate capable of preventing crystal defects, warps, cracks and peeling, etc., from being generated in a magnetic garnet single crystal film grown by a liquid phase epitaxial growth method.SOLUTION: In the nonmagnetic garnet sin...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a nonmagnetic garnet single crystal substrate capable of preventing crystal defects, warps, cracks and peeling, etc., from being generated in a magnetic garnet single crystal film grown by a liquid phase epitaxial growth method.SOLUTION: In the nonmagnetic garnet single crystal substrate used when a magnetic garnet single crystal film is grown by a liquid phase epitaxial growth method, a value obtained by dividing 80% of the total retardation by the thickness of the substrate is 1.3×10or less when retardation obtained by measuring the substrate having a plane orientation {111} with light having a wavelength of 520 nm and defined by the following formula (1) is represented as a frequency distribution. The retardation:d(Ne-No) ... a formula (1), where, in the formula (1), d is the thickness (the optical path length of measuring light for measuring retardation) of an anisotropic material (the substrate), Ne is a refractive index to extraordinary light, and No is a refractive index to ordinary light.SELECTED DRAWING: Figure 3
【課題】液相エピタキシャル成長法により育成される磁性ガーネット単結晶膜に結晶欠陥や反り、割れ、剥離等が起こり難い非磁性ガーネット単結晶基板を提供すること。【解決手段】磁性ガーネット単結晶膜を液相エピタキシャル成長法により育成する際に用いられる非磁性ガーネット単結晶基板において、面方位が{111}である上記基板を波長520nmの光で測定した下記式(1)で定義されるリターデーションについて、これを度数分布として表したとき、その累計80%のリターデーションを上記基板の厚さで割った値が1.3×10-5以下であることを特徴とする。リターデーション : d(Ne−No)...式(1)[但し、式(1)中、dは異方性物質(上記基板)の厚さ(リターデーションを測定する測定光の光路長)、Neは異常光に対する屈折率、Noは常光に対する屈折率である]【選択図】図3 |
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