MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR SUBSTRATE

PROBLEM TO BE SOLVED: To provide a method for efficiently manufacturing a GaN substrate having a damage layer removed from a backside plane while avoiding a breakdown of the substrate to the utmost in a process.SOLUTION: A manufacturing method of a nitride semiconductor substrate which has a front-side plane as a primary plane and a backside plane as another primary plane and of which the front-side plane is used for epitaxial growth of a nitride semiconductor includes the following steps: (1) a substrate preparation step for preparing a start substrate of which two primary planes are as-sliced planes formed by slicing a single crystal of a bulk nitride semiconductor, and (2) a backside plane etching step for removing by dry etching at least part of a damage layer formed on the backside primary plane of the nitride semiconductor substrate of the two primary planes of the start substrate.SELECTED DRAWING: Figure 1 【課題】裏側面のダメージ層が除去されたＧａＮ基板を、工程中での基板の破損を極力回避しつつ効率よく製造する方法の提供。【解決手段】一方の主表面である表側面と、他方の主表面である裏側面とを有し、前記表側面が窒化物半導体のエピタキシャル成長に用いられる窒化物半導体基板を製造する方法であって、下記工程を含む窒化物半導体基板の製造方法。（１）バルク窒化物半導体単結晶をスライスして、２つの主表面がアズスライス面である出発基板を準備する基板準備工程と、（２）前記出発基板の２つの主表面のうち、窒化物半導体基板の裏側面とすべき主表面に形成されたダメージ層の少なくとも一部をドライエッチングによって除去する裏側面エッチング工程と、を含む方法。【選択図】図１