ETCHING METHOD, MANUFACTURING METHOD OF ARTICLE AND SEMICONDUCTOR DEVICE, AND ETCHANT

ETCHING METHOD, MANUFACTURING METHOD OF ARTICLE AND SEMICONDUCTOR DEVICE, AND ETCHANT

PROBLEM TO BE SOLVED: To provide an etching technique capable of performing anisotropic processing.SOLUTION: The etching method includes: forming a catalyst layer 30 composed of a noble metal on a structure 10 composed of a semiconductor; and removing a portion in contact with the catalyst layer 30...

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Bibliographische Detailangaben
1. Verfasser: ASANO YUSAKU
Format: Patent
Sprache:eng ; jpn
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an etching technique capable of performing anisotropic processing.SOLUTION: The etching method includes: forming a catalyst layer 30 composed of a noble metal on a structure 10 composed of a semiconductor; and removing a portion in contact with the catalyst layer 30 out of the structure 10 by immersing the structure 10 into an etchant 40 containing a hydrofluoric acid, an oxidant, and organic additives.SELECTED DRAWING: Figure 4 【課題】異方性加工が可能なエッチング技術を提供する。【解決手段】実施形態のエッチング方法は、半導体からなる構造物１０上に、貴金属からなる触媒層３０を形成することと、前記構造物１０を、フッ化水素酸と酸化剤と有機添加剤とを含んだエッチング液４０中に浸漬させて、前記構造物１０のうち前記触媒層３０と接している部分を除去することとを含む。【選択図】図４