SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can remove deposited Cu while leaving a resist.SOLUTION: A semiconductor device manufacturing method comprises the steps of: depositing a first metal film 101a composing a lower pad layer 101, a second metal film 102a composing a hard layer 102 and a third metal film 103a composing an upper pad layer 103; performing a heat treatment to make the first through third metal films 101a-103a flow; and performing patterning on the first through third metal films 101a-103a. The process of performing patterning comprises: a process of performing anisotropic etching to remove the second and third metal films 102a, 103a and remove Cu 104 deposited in an interface between the first metal film 101a and the second metal film 102a during the heat treatment process and to leave portions of a resist 105 and the first metal film 101a on the side of a substrate 10; and a process of performing isotropic etching to remove the first metal film 101a exposed from the resist 105 while leaving the resist 105.SELECTED DRAWING: Figure 4 【課題】レジストを残しつつ、析出したＣｕを除去できる半導体装置の製造方法を提供する。【解決手段】下層パッド層１０１を構成する第１金属膜１０１ａ、硬質層１０２を構成する第２金属膜１０２ａ、上層パッド層１０３を構成する第３金属膜１０３ａを成膜し、熱処理して第１〜第３金属膜１０１ａ〜１０３ａを流動させる。そして、第１〜第３金属膜１０１ａ〜１０３ａをパターニングしてパターニングする工程では、第２、第３金属膜１０２ａ、１０３ａが除去されると共に、熱処理工程の際に第１金属膜１０１ａと第２金属膜１０２ａとの界面に析出するＣｕ１０４が除去され、レジスト１０５および第１金属膜１０１ａのうちの基板１０側の部分が残るように異方性エッチングを行う工程と、レジスト１０５を残しつつ、レジスト１０５から露出している第１金属膜１０１ａを除去する等方性エッチングを行う工程と、を行う。【選択図】図４