SEMICONDUCTIVE FILM, INTERMEDIATE TRANSFER BODY, SHEET CONVEYING BELT, AND IMAGE FORMING APPARATUS

PROBLEM TO BE SOLVED: To provide a semiconductive film that has a volume resistivity of 1×10Ω cm or more and 1×10Ω cm or less, suppresses a reduction in surface resistivity even after repeated application of voltage, and has an excellent antistatic property.SOLUTION: There is provided a semiconducti...

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Hauptverfasser: SUZUKI TOMOKO, YAMAZAKI TAKAHIKO, NAGAO KOJI, OGAWA TORU, KAWASE YUKO
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductive film that has a volume resistivity of 1×10Ω cm or more and 1×10Ω cm or less, suppresses a reduction in surface resistivity even after repeated application of voltage, and has an excellent antistatic property.SOLUTION: There is provided a semiconductive film that includes a resin and conductive agent particles, has a volume resistivity of 1×10Ω cm or more and 1×10Ω cm or less, and has a number of conductive paths of 110 or more, which is calculated on the basis of three-dimensional structural analysis of a cross section in the thickness direction.SELECTED DRAWING: Figure 2 【課題】体積抵抗率が1×105Ω・cm以上1×1012Ω・cm以下である半導電性フィルムであって、電圧の印加を繰り返しても表面抵抗率の低下を抑制し、除電性にも優れる半導電性フィルムを提供すること。【解決手段】樹脂と導電剤粒子とを含み、体積抵抗率が1×105Ω・cm以上1×1012Ω・cm以下であり、且つ、厚み方向の断面の3次元構造解析に基づいて算出された導電パス数が110以上である半導電性フィルム。【選択図】図2