METHOD FOR POLISHING SILICON WAFER

PROBLEM TO BE SOLVED: To provide a method for polishing a silicon wafer by which the occurrence of water-mark defect on a silicon wafer surface can be reduced in a single-side polishing step.SOLUTION: A method for polishing a silicon wafer comprises: a first polishing step for polishing a surface of a wafer W while supplying a roughly polishing liquid 224 to a polishing face of a roughly polishing cloth 223; a protection film forming step for supplying the roughly polishing cloth 223 after having gone through the first polishing step with a protection film forming solution 225 containing a water-soluble polymer subsequently to the first polishing step, and bringing the protection film forming solution 225 into contact with a polished face of the wafer W, thereby forming a protection film W1 on the polished face; and a second polishing step for polishing the face of the wafer W where the protection film is formed while supplying a finish polishing liquid to a polishing face of a finish polishing cloth different from the roughly polishing cloth 223.SELECTED DRAWING: Figure 10 【課題】片面研磨工程において、シリコンウェーハ表面へのウォーターマーク欠陥の発生を低減し得る、シリコンウェーハの研磨方法を提供する。【解決手段】粗研磨用研磨液２２４を粗研磨用研磨布２２３の研磨面に供給しながら、ウェーハＷの表面を研磨する第一研磨工程と、前記第一研磨工程に引き続いて、前記第一研磨工程を終えた後の前記粗研磨用研磨布２２３に水溶性高分子を含有する保護膜形成溶液２２５を供給して、前記ウェーハＷの被研磨面に前記保護膜形成溶液２２５を接触させ、前記被研磨面に保護膜Ｗ１を形成する保護膜形成工程と、仕上げ研磨用研磨液を前記粗研磨用研磨布２２３とは異なる仕上げ研磨用研磨布の研磨面に供給しながら、前記ウェーハＷの保護膜の形成面を研磨する第二研磨工程とを備える。【選択図】図１０