SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of achieving both solder flow prevention and suppression of burning of the laser processing residue.SOLUTION: A semiconductor device 100 comprises: a semiconductor chip 20; a plurality of insulation substrates 2 to each of which the sem...
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Format: | Patent |
Sprache: | eng ; jpn |
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a semiconductor device capable of achieving both solder flow prevention and suppression of burning of the laser processing residue.SOLUTION: A semiconductor device 100 comprises: a semiconductor chip 20; a plurality of insulation substrates 2 to each of which the semiconductor chip 20 is fixed; a heat sink 1 in which the plurality of insulation substrates 2 are respectively arranged in predetermined arrangement regions, and that has a first groove 3 surrounding each of the plurality of predetermined regions and a second groove 4 shallower than the first groove 3 and surrounding the first groove 3; and a solder 6 having filled the space between the insulation substrate 2 and the arrangement regions of the heat sink 1.SELECTED DRAWING: Figure 6
【課題】はんだ流れ防止とレーザー加工残渣の焼き付きの抑制を両立できる半導体装置を提供する。【解決手段】半導体装置100は、半導体チップ20と、半導体チップ20が固定された複数の絶縁基板2と、複数の絶縁基板2がそれぞれ所定の配置領域に配置され、複数の所定領域のそれぞれを囲む第1溝3と、第1溝3よりも浅く第1溝3を囲む第2溝4を有するヒートシンク1と、絶縁基板2とヒートシンク1の配置領域との間に充填されたはんだ6とを備える。【選択図】 図6 |
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