METHOD FOR MANUFACTURING III-GROUP NITRIDE SEMICONDUCTOR SUBSTRATE

PROBLEM TO BE SOLVED: To achieve higher working efficiency than the prior art, in a method for manufacturing a III-group nitride semiconductor substrate having a desired plane direction by joining a plurality of crystal pieces of III-group nitride semiconductor.SOLUTION: The method for manufacturing a III-group nitride semiconductor substrate is provided that comprises: a preparing step S1 of preparing a plurality of tabular crystal pieces of III-group nitride semiconductor having the uniform plane directions of a principal plane; a first juncture body forming step S2 of forming a first juncture body having a principal plane exposed to the top face by laminating the crystal pieces with the main planes being directed in a same direction and joining the crystal pieces to each other; a second juncture body forming step S3 of forming a second juncture body by joining the side faces of a plurality of first juncture bodies to each other while the principal plane is directed in a same direction; a third juncture body forming step S4 of forming a third juncture body by laminating the second juncture bodies with the principal plane being directed in the same direction and joining the second juncture bodies to each other; and a cutting-out step S5 of cutting out the substrate from the third juncture body.SELECTED DRAWING: Figure 1 【課題】複数のIII族窒化物半導体の結晶片を接合し、所望の面方位を有するIII族窒化物半導体基板を製造する製造方法において、従来よりも作業効率を向上させること。【解決手段】主面の面方位が揃っている複数の板状のIII族窒化物半導体の結晶片を準備する準備工程Ｓ１と、主面が同一方向を向く状態で結晶片を積層し、互いに接合することで、主面が上面に露出する第１の接合体を形成する第１の接合体形成工程Ｓ２と、複数の第１の接合体を、主面が同一方向を向く状態で互いの側面どうしで接合することで、第２の接合体を形成する第２の接合体形成工程Ｓ３と、第２の接合体を、主面が同一方向を向く状態で積層し、互いに接合することで、第３の接合体を形成する第３の接合体形成工程Ｓ４と、第３の接合体から、基板を切り出す切出工程Ｓ５と、を有するIII族窒化物半導体基板の製造方法。【選択図】図１