PLATING METHOD

PROBLEM TO BE SOLVED: To provide a method of filling through-silicon vias of an electronic device with copper, where the copper deposit in the vias is substantially void-free and free of surface defects; and a copper electroplating bath composition for use in the method.SOLUTION: A method of filling vias with a copper deposit comprises: providing an acidic copper electroplating bath comprising a source of copper ions, an acid electrolyte, a source of halide ions, an accelerator, a leveler, and a suppressor, the copper electroplating bath having a dynamic surface tension of 40 mN/m or less; providing as a cathode an electronic device substrate having one or more vias and having a conductive surface; contacting the electronic device substrate with the copper electroplating bath; and applying a potential for a period of time sufficient to fill the vias with a copper deposit; where the copper deposit is substantially void-free and substantially free of surface defects.SELECTED DRAWING: None 【課題】電子デバイスのシリコン貫通ビアを銅で充填する方法であって、ビア中の銅堆積物に実質的にボイドを含まず、表面欠陥を含まない方法及びこれに用いる銅電気めっき浴組成物の提供。【解決手段】動的表面張力≦４０ｍＮ／ｍを有し、銅イオン供給源、酸電解質、ハロゲン化物イオン供給源、促進剤、レベラー、及び抑制剤を含む酸性の銅電気めっき浴で、１つ以上のビアを有し導電性表面を有する電子デバイス基材をカソードとして、銅電めっき浴へ接触し銅堆積物で前記ビアを充填するのに充分な時間の間電位を印加し、実質的にボイドを含まない及び実質に表面欠陥を含まない、銅堆物をビアに充填する方法。【選択図】なし