SEMICONDUCTOR DEVICE MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To provide an art favorable to efficiently supply hydrogen to a semiconductor element of a semiconductor substrate.SOLUTION: A semiconductor device manufacturing method comprises a formation process of forming a hydrogen-containing silicon nitride film on a semiconductor substr...
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| Format: | Patent |
| Sprache: | eng ; jpn |
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To provide an art favorable to efficiently supply hydrogen to a semiconductor element of a semiconductor substrate.SOLUTION: A semiconductor device manufacturing method comprises a formation process of forming a hydrogen-containing silicon nitride film on a semiconductor substrate having a semiconductor element. The silicon nitride film has a first part and a second part lying on the first part. A density of the first part is lower than a density of the second part. A ratio of an N-H bonding amount to a Si-H bonding amount in the first part is higher than the ratio in the second part.
【課題】半導体基板の半導体素子に効率的に水素を供給するために有利な技術を提供する。【解決手段】半導体装置の製造方法は、半導体素子を有する半導体基板の上に、水素を含有するシリコン窒化膜を形成する形成工程を有する。シリコン窒化膜は、第１部分と、第１部分の上にある第２部分とを有する。第１部分の密度は、第２部分の密度よりも低い。第１部分におけるＮ−Ｈ結合量のＳｉ−Ｈ結合量に対する比率は、第２部分における当該比率よりも高い。【選択図】図２ |
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