CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR SHALLOW TRENCH ISOLATION (STI) AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To decrease nano-size particle related defects in chemical mechanical polishing (CMP) of shallow trench isolation (STI).SOLUTION: A processed chemical mechanical polishing (CMP) composition, or a CMP composition prepared by using processed cerium-oxide particles or processed ce...

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Bibliographische Detailangaben
Hauptverfasser:	JO-ANN TERESA SCHWARTZ, JOHN ANTHONY MARSELLA, STEVEN CHARLES WINCHESTER, SAIFI USMANI, SHI XIAOBO, CHOO JAE OUK, LAURA LEDENBACH, JAMES ALLEN SCHLUETER, JOHN EDWARD QUINCY HUGHES, ZHOU HONGJUN, DANIEL HERNANDEZ CASTILLO II
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING INORGANIC CHEMISTRY MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To decrease nano-size particle related defects in chemical mechanical polishing (CMP) of shallow trench isolation (STI).SOLUTION: A processed chemical mechanical polishing (CMP) composition, or a CMP composition prepared by using processed cerium-oxide particles or processed cerium-oxide slurry is used to polish a base material having at least one surface including a silicon-dioxide film for an STI (shallow trench isolation) process and the application thereof. A method of removing, reducing or processing trace metal contaminants and relatively small fine cerium-oxide particles from the cerium-oxide particles, the cerium-oxide slurry or the chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) is applied. 【課題】本発明は、シャロートレンチアイソレーション（ＳＴＩ）のＣＭＰ研磨において、ナノサイズ粒子が関連する欠陥を減少させることに関する。【解決手段】処理した化学機械研磨（ＣＭＰ）組成物、又は処理酸化セリウム粒子若しくは処理酸化セリウムスラリーを用いて調製したＣＭＰ研磨組成物を用いて、ＳＴＩ（シャロートレンチアイソレーション）プロセス及びその用途のために、二酸化ケイ素膜を含む少なくとも１つの表面を有する基材を研磨する。酸化セリウム粒子、酸化セリウムスラリー、又はシャロートレンチアイソレーション用（ＳＴＩ）用の化学機械研磨（ＣＭＰ）組成物から、微量金属汚染物質及び比較的小さな微細酸化セリウム粒子を、除去し、低減し、又は処理する方法を適用する。【選択図】なし