ANISOTROPIC CONDUCTIVE MATERIAL AND CONNECTING STRUCTURE

PROBLEM TO BE SOLVED: To provide a conductive particle which, when a connection structure is obtained by connecting between electrodes, hardly increases connection resistance between the electrodes even if the connection structure is exposed to high temperature and high humidity, and to provide a co...

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1. Verfasser: O GYOKA
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a conductive particle which, when a connection structure is obtained by connecting between electrodes, hardly increases connection resistance between the electrodes even if the connection structure is exposed to high temperature and high humidity, and to provide a connection structure using the conductive particle.SOLUTION: There is provided a conductive particle which comprises a substrate particle 2, a copper layer 3 provided on the surface 2a of the substrate particle 2 and a palladium layer 4 provided on the surface of the copper layer 3. The palladium layer 4 has an average thickness of 5 to 500 nm. A copper ion concentration eluted when 100 pts.wt. of a plurality of conductive particles 1 are immersed in 1000 pts.wt. of 0.001 N nitric acid for one minute at 25°C is 5 ppm/cmor less per unit surface area of the conductive particle 1. 【課題】電極間を接続して接続構造体を得た場合に、該接続構造体が高温高湿下に晒されても、電極間の接続抵抗が高くなり難い導電性粒子、並びに該導電性粒子を用いた接続構造体を提供する。【解決手段】本発明に係る導電性粒子1は、基材粒子2と、該基材粒子2の表面2aに設けられた銅層3と、該銅層3の表面3aに設けられたパラジウム層4とを備える。パラジウム層4の平均厚みは5〜500nmである。複数の導電性粒子1の100重量部を0.001N硝酸1000重量部に25℃で1分間浸漬しときに、溶出する銅イオン濃度は、導電性粒子1の単位表面積当たり5ppm/cm2以下である。【選択図】図1