POLISHING PAD

PROBLEM TO BE SOLVED: To provide a polishing pad capable of restraining the occurrence of a scratch, while realizing a high polishing rate, in the polishing pad including a very small hollow spherical body.SOLUTION: A polishing pad is a polyurethane polishing pad 7 including a very small hollow sphe...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	TATENO TEPPEI, MIYASAKA HIROHITO, MATSUOKA RYUMA, SAEKI TAKU, KIRAKU YOSHIE
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a polishing pad capable of restraining the occurrence of a scratch, while realizing a high polishing rate, in the polishing pad including a very small hollow spherical body.SOLUTION: A polishing pad is a polyurethane polishing pad 7 including a very small hollow spherical body 21, and is 10°-40° in Shore D hardness, and the sum total of the length of the edge of the very small hollow spherical body 21 exposed to a polishing surface 13 is 40000 μm or more per 1.350 mm×1.012 mm in the polishing area, and the ratio of the sum total of the length of the edge of the very small hollow spherical body and a wall thickness between the very small hollow spherical body, is 1800-3100:1. 【課題】微小中空球状体を含有する研磨パッドにおいて、高い研磨レートを実現しつつ、スクラッチの発生を抑制することができるものを提供する。【解決手段】研磨パッドは、微小中空球状体２１を含有するポリウレタン製の研磨パッド７であって、ショアＤ硬度が１０?以上４０?以下であり、研磨面１３に露出している前記微小中空球状体２１のエッジの長さの合計が研磨面積１．３５０ｍｍ?１．０１２ｍｍあたり４００００μｍ以上であり、微小中空球状体のエッジの長さの合計と、微小中空球状体の間の壁厚との比が１８００〜３１００：１である。【選択図】図２