HYDROGEN TREATMENT DEVICE

PROBLEM TO BE SOLVED: To provide a hydrogen treatment device capable of smoothly treating hydrogen contained in a gas to be processed even when the temperature of the gas to be processed is low while preventing oxygen from freeing from a reaction material.SOLUTION: A hydrogen treatment device 50 is...

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Bibliographische Detailangaben
Hauptverfasser: OKAMURA MASAHITO, YAGYU MOTOSHIGE, TAWARA MIKA, TANABE MASASHI, YOSHII TOSHIHIRO, MISHIN SHIGEHIRO
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a hydrogen treatment device capable of smoothly treating hydrogen contained in a gas to be processed even when the temperature of the gas to be processed is low while preventing oxygen from freeing from a reaction material.SOLUTION: A hydrogen treatment device 50 is a device for removing hydrogen contained in a gas by allowing an introduced gas to pass through a first reaction layer; and subsequently allowing the gas to pass through a second reaction layer. The hydrogen treatment device 50 includes a reaction material module 62 that has: the first reaction layer containing a first metal oxide which actively reacts with the hydrogen in a low temperature region and generates reaction heat; and the second reaction layer containing a second metal oxide that reacts with the hydrogen at a higher speed in a predetermined temperature region higher than the low temperature region than the reaction speed with the hydrogen in the low temperature region. 【課題】反応材からの酸素遊離を抑制しつつ、被処理ガスが低温であっても、被処理ガスに含まれる水素をスムーズに処理可能な水素処理装置を提供する。【解決手段】水素処理装置50は、導入されたガスが第1の反応層を通過し、その後に第2の反応層を通過することでガスに含まれる水素を除去する水素処理装置であって、第1の反応層は、低温度域で水素との反応が活性で反応熱を発生させる第1金属酸化物を有し、第2の反応層は、前記低温度域における水素との反応速度よりも、前記低温度域より高い所定範囲の温度域である高温度域における水素との反応速度が高い第2金属酸化物を有する反応材モジュール62を具備する。【選択図】 図2