METHOD OF PRODUCING WHITE GAN POWDER, AND WHITE GAN POWDER

METHOD OF PRODUCING WHITE GAN POWDER, AND WHITE GAN POWDER

PROBLEM TO BE SOLVED: To provide a method of producing a white GaN powder for a sputtering target that can form a GaN thin film having high purity and excellent crystallinity at low cost by a sputtering method to obtain the GaN thin film excellent in properties as a fluophor and communication elemen...

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Bibliographische Detailangaben
Hauptverfasser: MISUNO ATSUSHI, SHIBAYAMA TAKASANE
Format: Patent
Sprache:eng ; jpn
Schlagworte:
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of producing a white GaN powder for a sputtering target that can form a GaN thin film having high purity and excellent crystallinity at low cost by a sputtering method to obtain the GaN thin film excellent in properties as a fluophor and communication element, and such a white GaN powder.SOLUTION: This invention provides a method of producing a white GaN powder, the method comprising the step of heating Ga2O3 powder in a pressurized atmosphere furnace of ammonia at temperature lower than or equal to 900°C for 3-4 hours. 【課題】蛍光体や通信素子としての特性に優れたＧａＮ薄膜を得るために、スパッタ法により、低コストで高純度かつ結晶性が良好なＧａＮ薄膜が形成可能なスパッタリングターゲット用の白色ＧａＮ粉末の製造方法および白色ＧａＮ粉末を提供する。【解決手段】本発明の白色ＧａＮ粉末の製造方法は、Ｇａ２Ｏ３粉末をアンモニアの加圧雰囲気炉内で９００℃以下の温度で３〜４時間加熱する工程を含むことを特徴とする白色ＧａＮ粉末の製造方法。【選択図】図２