SEMICONDUCTOR LIGHT EMITTING DEVICE

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor light emitting device.SOLUTION: A semiconductor light emitting element constituting a semiconductor light emitting device includes: a photosemiconductor laminated layer in which an n-type semiconductor layer, an active layer and a p-type semiconductor layer are laminated; an n-side electrode and a p-side electrode formed on one surface of the photosemiconductor laminated layer; an insulation film formed on the n-side electrode and the p-side electrode and including an n-contact hole and a p-contact hole; a first conductive member formed on the insulation film and brought into contact with the n-side electrode through the n-contact hole; and a second conductive member brought into contact with the p-side electrode through the p-contact hole. The p-contact hole is arranged in a region corresponding to a corner region of the photosemiconductor laminated layer. 【課題】信頼性が高い半導体発光装置を提供する。【解決手段】当該半導体発光装置を構成する半導体発光素子は、ｎ型半導体層、活性層、および、ｐ型半導体層が積層する光半導体積層と、光半導体積層の一方の表面に形成されたｎ側電極およびｐ側電極と、ｎ側電極およびｐ側電極上に形成され、ｎコンタクトホールおよびｐコンタクトホールを備える絶縁膜と、絶縁膜上に形成され、ｎコンタクトホールを通ってｎ側電極と接触する第１導電部材、および、ｐコンタクトホールを通ってｐ側電極と接触する第２導電部材と、を含み、ｐコンタクトホールは、光半導体積層の角領域に対応する領域に配設されている。【選択図】 図５