METHOD OF INCREASING TARGET UTILIZATION IN ION BEAM DEPOSITION TOOL
PROBLEM TO BE SOLVED: To provide a method of increasing a target utilization and a target life in a sputtering deposition tool.SOLUTION: In a sputtering deposition tool 100 of a type in which an ion source generates a beam directed to a sputtering target, the sputtering target includes an elongated...
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| creator | VICTOR L CASTRO MARIO B ROQUE |
| description | PROBLEM TO BE SOLVED: To provide a method of increasing a target utilization and a target life in a sputtering deposition tool.SOLUTION: In a sputtering deposition tool 100 of a type in which an ion source generates a beam directed to a sputtering target, the sputtering target includes an elongated external skirt 102 and substantially circular insert 103 positioned within the skirt 102. The surfaces of the skirt 102 and the insert 103 are relatively coplanar and form a target surface. An elongated dimension of the skirt 102 is coaxially directed to the ion source. The insert 103 is rotated within the skirt 102 to one of a plurality of positions during use of the target by the sputtering deposition tool to distribute wear of the target around the rotating insert.
【課題】スパッタリング成膜ツールにおけるターゲットの利用率及びターゲットの寿命を増大させる方法の提供。【解決手段】イオン源がスパッタリングターゲットに向けられたビームを発生させる種類のスパッタ成膜ツール１００において、スパッタリングターゲットは細長い外部スカート１０２及びスカート１０２内に位置するほぼ円形の挿入部１０３を含み、スカート１０２及び挿入部１０３の表面は相対的に同一平面上にあり、ターゲットの表面を形成し、スカート１０２の細長い寸法はイオン源の方向に同軸であり、挿入部１０３はスパッタ成膜ツールによるターゲットの使用の間、スカート内１０２で複数の位置のうちの１つに回転され、ターゲットの損耗を回転挿入部の周りに分布させる方法。【選択図】図１ |
| format | Patent |
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【課題】スパッタリング成膜ツールにおけるターゲットの利用率及びターゲットの寿命を増大させる方法の提供。【解決手段】イオン源がスパッタリングターゲットに向けられたビームを発生させる種類のスパッタ成膜ツール１００において、スパッタリングターゲットは細長い外部スカート１０２及びスカート１０２内に位置するほぼ円形の挿入部１０３を含み、スカート１０２及び挿入部１０３の表面は相対的に同一平面上にあり、ターゲットの表面を形成し、スカート１０２の細長い寸法はイオン源の方向に同軸であり、挿入部１０３はスパッタ成膜ツールによるターゲットの使用の間、スカート内１０２で複数の位置のうちの１つに回転され、ターゲットの損耗を回転挿入部の周りに分布させる方法。【選択図】図１</description><language>eng ; jpn</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151001&DB=EPODOC&CC=JP&NR=2015172245A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76304</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151001&DB=EPODOC&CC=JP&NR=2015172245A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VICTOR L CASTRO</creatorcontrib><creatorcontrib>MARIO B ROQUE</creatorcontrib><title>METHOD OF INCREASING TARGET UTILIZATION IN ION BEAM DEPOSITION TOOL</title><description>PROBLEM TO BE SOLVED: To provide a method of increasing a target utilization and a target life in a sputtering deposition tool.SOLUTION: In a sputtering deposition tool 100 of a type in which an ion source generates a beam directed to a sputtering target, the sputtering target includes an elongated external skirt 102 and substantially circular insert 103 positioned within the skirt 102. The surfaces of the skirt 102 and the insert 103 are relatively coplanar and form a target surface. An elongated dimension of the skirt 102 is coaxially directed to the ion source. The insert 103 is rotated within the skirt 102 to one of a plurality of positions during use of the target by the sputtering deposition tool to distribute wear of the target around the rotating insert.
【課題】スパッタリング成膜ツールにおけるターゲットの利用率及びターゲットの寿命を増大させる方法の提供。【解決手段】イオン源がスパッタリングターゲットに向けられたビームを発生させる種類のスパッタ成膜ツール１００において、スパッタリングターゲットは細長い外部スカート１０２及びスカート１０２内に位置するほぼ円形の挿入部１０３を含み、スカート１０２及び挿入部１０３の表面は相対的に同一平面上にあり、ターゲットの表面を形成し、スカート１０２の細長い寸法はイオン源の方向に同軸であり、挿入部１０３はスパッタ成膜ツールによるターゲットの使用の間、スカート内１０２で複数の位置のうちの１つに回転され、ターゲットの損耗を回転挿入部の周りに分布させる方法。【選択図】図１</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD2dQ3x8HdR8HdT8PRzDnJ1DPb0c1cIcQxydw1RCA3x9PGMcgzx9PcDyiqAKCdXR18FF9cA_2BPsHCIv78PDwNrWmJOcSovlOZmUHJzDXH20E0tyI9PLS5ITE7NSy2J9wowMjA0NTQ3MjIxdTQmShEAfOAr4g</recordid><startdate>20151001</startdate><enddate>20151001</enddate><creator>VICTOR L CASTRO</creator><creator>MARIO B ROQUE</creator><scope>EVB</scope></search><sort><creationdate>20151001</creationdate><title>METHOD OF INCREASING TARGET UTILIZATION IN ION BEAM DEPOSITION TOOL</title><author>VICTOR L CASTRO ; MARIO B ROQUE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2015172245A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2015</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>VICTOR L CASTRO</creatorcontrib><creatorcontrib>MARIO B ROQUE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VICTOR L CASTRO</au><au>MARIO B ROQUE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF INCREASING TARGET UTILIZATION IN ION BEAM DEPOSITION TOOL</title><date>2015-10-01</date><risdate>2015</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method of increasing a target utilization and a target life in a sputtering deposition tool.SOLUTION: In a sputtering deposition tool 100 of a type in which an ion source generates a beam directed to a sputtering target, the sputtering target includes an elongated external skirt 102 and substantially circular insert 103 positioned within the skirt 102. The surfaces of the skirt 102 and the insert 103 are relatively coplanar and form a target surface. An elongated dimension of the skirt 102 is coaxially directed to the ion source. The insert 103 is rotated within the skirt 102 to one of a plurality of positions during use of the target by the sputtering deposition tool to distribute wear of the target around the rotating insert.
【課題】スパッタリング成膜ツールにおけるターゲットの利用率及びターゲットの寿命を増大させる方法の提供。【解決手段】イオン源がスパッタリングターゲットに向けられたビームを発生させる種類のスパッタ成膜ツール１００において、スパッタリングターゲットは細長い外部スカート１０２及びスカート１０２内に位置するほぼ円形の挿入部１０３を含み、スカート１０２及び挿入部１０３の表面は相対的に同一平面上にあり、ターゲットの表面を形成し、スカート１０２の細長い寸法はイオン源の方向に同軸であり、挿入部１０３はスパッタ成膜ツールによるターゲットの使用の間、スカート内１０２で複数の位置のうちの１つに回転され、ターゲットの損耗を回転挿入部の周りに分布させる方法。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD OF INCREASING TARGET UTILIZATION IN ION BEAM DEPOSITION TOOL |
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