SEMICONDUCTOR DEVICE WITH PASSIVATION LAYER AND METHOD FOR PRODUCING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device with a mechanically and chemically robust passivation layer, and a method for producing the same.SOLUTION: A semiconductor device includes a semiconductor body 100 having a first surface, a contact electrode 2 on the first surface, and a passivation layer 3 on the first surface 101 adjacent to the contact electrode 2 and partially overlapping the contact electrode 2. The passivation layer 3 comprises a layer stack with a first layer 31 comprising an oxide on the first surface and a second layer 32 comprising a nitride on the first layer. 【課題】機械的および化学的にロバストなパッシベーション層を有する半導体素子およびその生産方法を提供する。【解決手段】半導体素子は、第１の表面を有する半導体本体１００と、第１の表面上の接触電極２と、接触電極２に隣接し、接触電極２と部分的に重なり合う第１の表面１０１上のパッシベーション層３とを含む。パッシベーション層３は、第１の表面上の酸化物を含む第１の層３１と、第１の層上の窒化物を含む第２の層３２とを有する積層体を含む。【選択図】図１