SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device which obtains high heat radiation characteristics in a high output power device.SOLUTION: A semiconductor device of the invention includes: a lead frame; a circuit board disposed on the lead frame; a power device having a switching element and...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	HOSOYAMADA SUMIKAZU, NAKAMURA SHINGO, CHIKAI TOMOYA, KUMAGAI KINICHI, MIYAKOSHI TAKESHI, MATSUBARA HIROAKI, SAKUMOTO SHOTARO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor device which obtains high heat radiation characteristics in a high output power device.SOLUTION: A semiconductor device of the invention includes: a lead frame; a circuit board disposed on the lead frame; a power device having a switching element and mounted on the circuit board through bumps; and a metal heat radiation member connected with the power device. A multilayer wiring board may be used as the circuit board. The circuit board may include: a capacitive element; a resistance element; an inductor element; a diode element; and the switching element. 【課題】本発明は、高出力のパワーデバイスにおいて、高い放熱特性が得られる半導体装置を提供することを目的とする。【解決手段】本発明における半導体装置は、リードフレームと、リードフレーム上に配置された回路基板と、スイッチング素子を有し、回路基板にバンプを介して実装されたパワーデバイスと、パワーデバイスに接続された金属の放熱部材と、を有する。ここで、回路基板は多層配線基板であってもよい。さらに、回路基板は容量素子、抵抗素子、インダクタ素子、ダイオード素子、及びスイッチング素子を有してもよい。【選択図】図２