SUBSTRATE PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus with improved uniformity of substrate processing.SOLUTION: A substrate processing apparatus includes: a gas supply part formed into a cylindrical shape, the gas supply part in which a flange part is provided so as to annularly enclose...

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Bibliographische Detailangaben
Hauptverfasser: SUZUKI TOSHIYUKI, NUMATA TAKAYUKI, MATSUZAKI KENSHO, KONNO TAIICHIRO, FUJIKURA TSUNEAKI, NONAKA TAKEHIRO
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a substrate processing apparatus with improved uniformity of substrate processing.SOLUTION: A substrate processing apparatus includes: a gas supply part formed into a cylindrical shape, the gas supply part in which a flange part is provided so as to annularly enclose an outer periphery of a gas supply port opened at a one-end part; an evaporation container in which an evaporation space is formed and a gas introduction port for introducing a gas supplied from the gas supply part into the evaporation space is opened on a side wall; and pressure contact means which places the gas supply part in pressure contact with the evaporation container in a state where the gas supply port faces the gas introduction port and causes an apical surface of the flange part and the side wall of the evaporation container to contact with each other in an airtight manner. 【課題】基板処理の均一性を向上させる基板処理装置を提供する。【解決手段】筒状に形成され、一端部に開設されたガス供給口の外周を環状に囲うようにフランジ部が設けられたガス供給部と、内部に気化空間が形成され、ガス供給部から供給されたガスを気化空間内に導入するガス導入口が側壁に開設された気化容器と、ガス供給口とガス導入口とを対向させた状態でガス供給部と気化容器とを圧接させ、フランジ部の先端面と気化容器の側壁とを気密に当接させる圧接手段と、を備える。【選択図】図1