METHODS OF FORMING PATTERNS

PROBLEM TO BE SOLVED: To provide novel methods of forming patterned masks.SOLUTION: A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features 16, 18. A bru...

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Bibliographische Detailangaben
Hauptverfasser:	PHILLIP DENE HUSTAD, JONG KEUN PARK, WILLIAM R BROWN, NIK MIRIN, PETER TREFONAS III, CHRISTOPHER NAM LEE, XUE GLORIA CHEN, ADAM OLSON, KAVERI JAIN, HO SEOP EOM, DAN MILLWARD
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS THEREFOR METALLURGY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide novel methods of forming patterned masks.SOLUTION: A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features 16, 18. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material. 【課題】パターン化されたマスクを形成する新規方法をを提供する。【解決手段】第一のマスクは材料上に形成される。第一のマスクは、その中に伸長し、第一のパターンを画定するフィーチャを有する。第一のパターンは、フィーチャ１６，１８の分布にわたって第一レベルの均一性を有する。ブラシ層は、フィーチャを狭めて、第一のマスクから第二のマスクを生成するために、第一のマスクにわたって、フィーチャ内に形成される。第二のマスクは、第一レベルの均一性よりも大きい、狭められたフィーチャにわたる第二レベルの均一性を有する。パターンは、材料へと第二のマスクから転写される。【選択図】図１