VACUUM PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To provide a technique which allows for sufficient static elimination of an attraction surface in an electrostatic attraction part, without lowering the processing efficiency of deposition, or the like, in a vacuum processing apparatus.SOLUTION: A vacuum processing apparatus in...

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1. Verfasser: YANAGIHORI FUMITSUGU
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a technique which allows for sufficient static elimination of an attraction surface in an electrostatic attraction part, without lowering the processing efficiency of deposition, or the like, in a vacuum processing apparatus.SOLUTION: A vacuum processing apparatus includes a first processing chamber 11 performing vacuum processing for a processed substrate W, a vacuum chamber 2 connected with the first processing chamber 11 and having a substrate conveyance region 5 where the processed substrate W is conveyed, and a stage 21 having an electrostatic attraction part 25 for attracting the processed substrate W electrostatically, and configured movably between the first processing chamber 11 of the vacuum chamber 2 and the substrate conveyance region 5. In the substrate conveyance region 5 of the vacuum chamber 2, while retreating the processed substrate W from the electrostatic attraction part 25 of the stage 21, the attraction surface for attracting the processed substrate W in the electrostatic attraction part 25 is subjected to static elimination with ionized inert gas G, and the substrate conveyance region 5 is evacuated. 【課題】真空処理装置において、成膜等の処理効率を低下させることなく、静電吸着部の吸着面の除電を十分に行うことができる技術を提供する。【解決手段】処理対象基板Wに対して真空処理を行う第1の処理室11と、第1の処理室11に接続され処理対象基板Wの搬送を行う基板搬送領域5とを有する真空槽2と、処理対象基板Wを静電吸着する静電吸着部25を有し真空槽2の第1の処理室11と基板搬送領域5との間を移動可能に構成されたステージ21とを備える。真空槽2の基板搬送領域5において、処理対象基板Wをステージ21の静電吸着部25から退避させた状態で、静電吸着部25の処理対象基板Wを吸着する吸着面に対し、イオン化された不活性ガスGで除電を行い、かつ、基板搬送領域5の真空排気を行うように構成されている。【選択図】 図6