POLISHING AGENT, POLISHING AGENT SET AND METHOD FOR POLISHING SUBSTRATE

PROBLEM TO BE SOLVED: To provide a polishing agent, a polishing agent set and a polishing method capable of obtaining a polishing speed for a useful insulating material and improving smoothness of a substrate surface.SOLUTION: There is provided a polishing agent which comprises water, cerium oxide p...

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1. Verfasser: AKUTSU TOSHIAKI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a polishing agent, a polishing agent set and a polishing method capable of obtaining a polishing speed for a useful insulating material and improving smoothness of a substrate surface.SOLUTION: There is provided a polishing agent which comprises water, cerium oxide particles, saccharides having 140 or less carbon atoms, a nonionic surfactant and an organic acid, where the cerium oxide particles are single-crystal particles, the surface potential in the polishing agent is negative. The primary particle diameter (crystallite diameter) of abrasive grains is 1 nm or more and 300 nm or less. 【課題】有用な絶縁材料の研磨速度を得ることが出来ると共に、基板表面の平滑性を向上させることが可能な研磨剤、研磨剤セット及び研磨方法を提供する。【解決手段】水と、酸化セリウム粒子と、炭素数が140以下の糖類と、非イオン性界面活性剤と、有機酸と、を含有する研磨剤であって、前記酸化セリウム粒子が、単結晶粒子であり、かつ、研磨剤中で表面電位が負である、研磨剤。砥粒の一次粒子径(結晶子径)が、1nm以上300nm以下である、前記の研磨剤。【選択図】図1