STACKED SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a stacked semiconductor element which allows semiconductor elements to be stably stacked.SOLUTION: In a stacked semiconductor element of the present embodiment, a plurality of planar semiconductor elements each including a semiconductor substrate, a surface electrode...

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1. Verfasser: MURAMATSU SHINJI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a stacked semiconductor element which allows semiconductor elements to be stably stacked.SOLUTION: In a stacked semiconductor element of the present embodiment, a plurality of planar semiconductor elements each including a semiconductor substrate, a surface electrode formed on one principal surface of the semiconductor substrate, a protective film formed around the surface electrode and a resin guide formed to surround a circumference of an electrode opening are stacked by a bonding material. In addition, a resin guide is also provided on a surface end of the semiconductor element. 【課題】半導体素子を安定して積層することができる積層型半導体素子を提供する。【解決手段】本発明の積層型半導体素子は、半導体基板と、半導体基板の一方の主面に形成された表面電極と、表面電極の周辺に保護膜を形成し、電極開口部の周囲を囲むように形成された樹脂ガイドとを有したプレーナ型半導体素子が、接合材によって複数積層されていることを特徴とする。また、樹脂ガイドは、さらに、半導体素子の表面端部にも設けている。【選択図】図3