SINGLE CRYSTAL SAPPHIRE RIBBON FOR LARGE SUBSTRATE

SINGLE CRYSTAL SAPPHIRE RIBBON FOR LARGE SUBSTRATE

PROBLEM TO BE SOLVED: To provide a sapphire ribbon for a large substrate usable for optical use such as a blue light-emitting diode.SOLUTION: In a spreading step for enlarging and growing the breadth of a crystal from a seed crystal by EFG method, a spreading angle of a sapphire ribbon is raised up...

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Bibliographische Detailangaben
Hauptverfasser: SAITO HIROTOMO, HIGUCHI KAZUTO, TAKAHASHI MASAYUKI, FURUTAKI TOSHIRO, SASAKI TADASHI, HORIKOSHI FUMIYA
Format: Patent
Sprache:eng ; jpn
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a sapphire ribbon for a large substrate usable for optical use such as a blue light-emitting diode.SOLUTION: In a spreading step for enlarging and growing the breadth of a crystal from a seed crystal by EFG method, a spreading angle of a sapphire ribbon is raised up to 50-90°. Hereby, a sapphire ribbon for a large substrate having no crystal failure can be produced, and a large sapphire substrate having a quality usable for optical use such as a blue light-emitting diode can be provided. 【課題】青色発光ダイオードなどの光学用途に使用できる大型基板用のサファイアリボンを提供すること。【解決手段】ＥＦＧ法で種結晶から結晶の横幅が拡大して成長するスプレディング工程で、サファイアリボンのスプレディング角が５０〜９０?になるよう引き上げていくことによって、結晶不良のない大型基板用のサファイアリボンを作製することが出来、青色発光ダイオードなどの半導体用途に使用できる品質の大型のサファイア基板を提供することが出来た。【選択図】図１