SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing apparatus which enables bonding with excellent durability against a high temperature at low cost; and ensures a joint strength by prevention of oxidation at a joint part; and achieves maintenance of an insulation creepage insulation distance between an upper electrode and a lower electrode of a semiconductor chip.SOLUTION: A semiconductor device 1 has a structure composed of an insert material 4 which contains metal developing an eutectic reaction with metal of each joint surface and which is sandwiched between a joint surface of a semiconductor chip 1 and at least a joint surface of a wiring metal, and an irregularity 5 for breaking an oxide film of the joint surface, which is provided on the joint surface of the wiring metal 3, in which a semiconductor chip 2 and the wiring metal 3 are directly bonded in at least a part of the junction interface by relative application of pressure and heat to the semiconductor chip 2 and the wiring metal 3. The semiconductor device 1 has a shape where the irregularity 5 of the joint surface of the wiring metal 3 continues at least in one direction and a cross sectional area of a recess 5B on one side in the continuing direction is made larger than a cross sectional area of a recess 5B on the other side. 【課題】低コストで高温耐久性に優れた接合を可能にし、接合部の酸化阻止による接合強度の確保や、半導体チップの上下電極間における沿面絶縁距離の維持を実現する半導体装置の製造装置を提供する。【解決手段】半導体チップ１の接合面と、配線金属３の少なくとも接合面との間に、各接合面の金属と共晶反応を生じる金属を含むインサート材４を介在させると共に、上記接合面の酸化皮膜を破壊するための凹凸５を配線金属３の接合面に設け、半導体チップ２と配線金属３とを相対的に加圧及び加熱することにより接合界面の少なくとも一部において双方を直接接合して成る構造を有し、配線金属３の接合面の凹凸５が、少なくとも一方向に連続しており、連続方向の一方側の凹部５Ｂの断面積に対して、他方側の凹部５Ｂの断面積を大きくした形状である半導体装置１。【選択図】図１