METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR VERTICAL STRUCTURE LED CHIP

PROBLEM TO BE SOLVED: To provide a high-quality vertical LED chip which has few cracks in a light-emitting structure section.SOLUTION: A Group III nitride semiconductor vertical structure LED chip comprises such a structure for sandwiching, between a pair of electrodes: a conductive support section serving as a lower electrode; a connection layer provided on the support section; an ohmic electrode layer provided on the connection layer; and a light-emitting structure section which has a second conduction type Group III nitride semiconductor layer, a light-emitting layer provided on the second conduction type Group III nitride semiconductor layer and a first conduction type Group III nitride semiconductor layer that is provided on the light-emitting layer and has a conduction type different from that of the second conduction type. A plane of the light-emitting structure section has a circular shape or a 4n-angled shape (n is a positive integer) with rounded corners at a corner and a plane of the support section has such a shape as to be larger than and different from the plane of the light-emitting structure section. 【課題】発光構造部にクラックの少ない、高品質の縦型ＬＥＤチップを提供する。【解決手段】下部電極を兼ねる導電性サポート部と、該サポート部上に設けられた接続層と、該接続層上に設けられたオーミック電極層と、第２伝導型III族窒化物半導体層、該第２伝導型III族窒化物半導体層の上に設けられた発光層、および、該発光層の上に設けられた前記第２伝導型とは異なる伝導型の第１伝導型III族窒化物半導体層を有する発光構造部とを一対の電極で挟んだ構造を有し、前記発光構造部の平面が、円またはコーナーに丸みを有する４ｎ角形状(ｎは正の整数とする。)であり、かつ前記サポート部の平面は、前記発光構造部の平面よりも大きくかつ異なる形状を有することを特徴とする。【選択図】図５