EPITAXIAL WAFER FOR HETEROJUNCTION BIPOLAR TRANSISTORS, AND HETEROJUNCTION BIPOLAR TRANSISTOR ELEMENT

EPITAXIAL WAFER FOR HETEROJUNCTION BIPOLAR TRANSISTORS, AND HETEROJUNCTION BIPOLAR TRANSISTOR ELEMENT

PROBLEM TO BE SOLVED: To provide an epitaxial wafer for heterojunction bipolar transistors and a heterojunction bipolar transistor element which enable the increase in current gain while minimizing a turn-on voltage.SOLUTION: An epitaxial wafer 100 for heterojunction bipolar transistors comprises: a...

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Bibliographische Detailangaben
1. Verfasser: FUJIO SHINJIRO
Format: Patent
Sprache:eng ; jpn
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an epitaxial wafer for heterojunction bipolar transistors and a heterojunction bipolar transistor element which enable the increase in current gain while minimizing a turn-on voltage.SOLUTION: An epitaxial wafer 100 for heterojunction bipolar transistors comprises: a base layer 105 made of InGaAs(0