SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
PROBLEM TO BE SOLVED: To provide a semiconductor device including a photoelectric conversion element which has high sensitivity and inhibits blooming and which is capable of obtaining a highly reliable image; and to provide a method for manufacturing the semiconductor device.SOLUTION: A semiconducto...
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a semiconductor device including a photoelectric conversion element which has high sensitivity and inhibits blooming and which is capable of obtaining a highly reliable image; and to provide a method for manufacturing the semiconductor device.SOLUTION: A semiconductor device comprises: a semiconductor substrate PSB1; a first p-type epitaxial layer PE1; a second p-type epitaxial layer PE2; and a first photoelectric conversion element PD1. The first p-type epitaxial layer PE1 is formed on a principal surface of the semiconductor substrate PSB1. The second p-type epitaxial layer PE2 is formed to cover a top face of the first p-type epitaxial layer PE1. The first photoelectric conversion element PD1 is formed in the second p-type epitaxial layer PE2. The first and second p-type epitaxial layers PE1, PE2 are formed by silicon and the first p-type epitaxial layer PE1 has a p-type impurity concentration higher than that of the second p-type epitaxial layer PE2.
【課題】感度が高くかつブルーミングが抑制された信頼性の高い画像を得ることが可能な、光電変換素子を備える半導体装置およびその製造方法を提供する。【解決手段】半導体基板ＰＳＢ１と、第１のｐ型エピタキシャル層ＰＥ１と、第２のｐ型エピタキシャル層ＰＥ２と、第１の光電変換素子ＰＤ１とを備えている。第１のｐ型エピタキシャル層ＰＥ１は半導体基板ＰＳＢ１の主表面上に形成されている。第２のｐ型エピタキシャル層ＰＥ２は第１のｐ型エピタキシャル層ＰＥ１の上面を覆うように形成されている。第１の光電変換素子ＰＤ１は第２のｐ型エピタキシャル層ＰＥ２内に形成されている。第１および第２のｐ型エピタキシャル層ＰＥ２はシリコンにより形成され、第１のｐ型エピタキシャル層ＰＥ１は第２のｐ型エピタキシャル層ＰＥ２よりもｐ型不純物濃度が高い。【選択図】図４ |
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