BLANK MASK AND PHOTOMASK

PROBLEM TO BE SOLVED: To provide a blank mask and a photomask.SOLUTION: A photomask provided with a high-resolution pattern of a half-pitch of 32 nm grade or higher, especially 22 nm grade or higher by forming a light-shielding film and a blank photomask which has a high etching selection rate to th...

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Bibliographische Detailangaben
Hauptverfasser:	JANG KYU-JIN, KANG GEUNG-WON, LEE JONG HWA, JEONG SEE-JUN, NAM KEE SOO, LIANG ZHE GUI, SHIN CHEOL, KIN SHOSHUN
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a blank mask and a photomask.SOLUTION: A photomask provided with a high-resolution pattern of a half-pitch of 32 nm grade or higher, especially 22 nm grade or higher by forming a light-shielding film and a blank photomask which has a high etching selection rate to the light-shielding film and is provided with a thin hard film, on a transparent substrate. A photomask excellent in quality is provided by adjusting the composition ratio of a metal and silicon(Si) to light elements, with the metal and elements constituting the light-shielding film, and suppressing pattern damage by XeFgas in an electronic repairing step. 【課題】ブランクマスク及びフォトマスクを提供する。【解決手段】本発明は、透明基板上に遮光性膜及びその遮光性膜に対するエッチング選択比が高く、薄肉のハードフィルムを備えるブランクマスクを形成することで、ハーフピッチ３２ｎｍ級以下、特に２２ｎｍ級以下の高解像度パターンが備えられたフォトマスクを具現する。また、遮光性膜を構成する金属及びシリコン（Ｓｉ）と軽元素との組成比を調節して、電子ビームリペア工程時にＸｅＦ２ガスによるパターン損傷を抑制して優れた品質を持つフォトマスクを提供する。【選択図】図３