SEMICONDUCTOR DEVICE INSPECTION METHOD AND SEMICONDUCTOR DEVICE INSPECTION DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device inspection method and a semiconductor device inspection device capable of accurately determining whether a semiconductor device configured so that a semiconductor element and a substrate are bonded together by a bonding material containing a plurality of metallic fine particles passes/fails.SOLUTION: A semiconductor device inspection method according to an embodiment includes the steps of: heating a semiconductor device in which a semiconductor element is bonded to a substrate by a bonding material containing a plurality of metallic fine particles, and acquiring image data on a thermal distribution of the semiconductor device over time; obtaining a temporal change in a fractal dimension on the basis of the image data; calculating a temporal change inclination of the fractal dimension; and determining whether the semiconductor device passes or fails by comparing the inclination with a preset reference inclination. 【課題】半導体素子と基板とが複数の金属微粒子を含む接合材で接合された半導体装置について、半導体装置の良否判定を正確に行うことができる半導体装置の検査方法及び半導体装置の検査装置を提供すること。【解決手段】実施形態に係る半導体装置の検査方法は、半導体素子と基板とが複数の金属微粒子を含む接合材で接合された半導体装置を加熱して、前記半導体装置における熱分布の画像データを経時的に取得する工程と、前記画像データに基づきフラクタル次元の時間変化を求める工程と、前記フラクタル次元の時間変化の傾きを求める工程と、前記傾きと、予め設定された基準の傾きと、を比較して前記半導体装置の良否を判定する工程と、を備える。【選択図】図１