LINEAR HIGH ELECTRON MOBILITY TRANSISTOR

PROBLEM TO BE SOLVED: To provide a structure arrangement, production method and system of an integrated circuit (IC) such as a high electron mobility transistor (HEMT).SOLUTION: An integrated circuit (IC) device 100 included in an IC device system comprises a gallium nitride (GaN) buffer layer 112 f...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHOU TSO-MIN, SAUNIER PAUL, TSERNG HUA-QUEN
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!