LINEAR HIGH ELECTRON MOBILITY TRANSISTOR

LINEAR HIGH ELECTRON MOBILITY TRANSISTOR

PROBLEM TO BE SOLVED: To provide a structure arrangement, production method and system of an integrated circuit (IC) such as a high electron mobility transistor (HEMT).SOLUTION: An integrated circuit (IC) device 100 included in an IC device system comprises a gallium nitride (GaN) buffer layer 112 f...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHOU TSO-MIN, SAUNIER PAUL, TSERNG HUA-QUEN
Format: Patent
Sprache:eng ; jpn
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a structure arrangement, production method and system of an integrated circuit (IC) such as a high electron mobility transistor (HEMT).SOLUTION: An integrated circuit (IC) device 100 included in an IC device system comprises a gallium nitride (GaN) buffer layer 112 formed on a substrate 104, an aluminum-gallium nitride (AlGaN) layer 116 formed on the GaN buffer layer 112, and an indium-aluminum nitride barrier layer 124 formed on the AlGaN layer 116. 【課題】高移動度トランジスタ（ＨＥＭＴ）などの集積回路（ＩＣ）の構造配置、製造方法およびシステムを提供する。【解決手段】集積回路（ＩＣ）デバイスシステムに含まれるＩＣデバイス１００は、基板１０４の上に形成される窒化ガリウム（ＧａＮ）バッファ層１１２と、ＧａＮバッファ層１１２の上に形成される窒化アルミニウムガリウム（ＡｌＧａＮ）層１１６と、ＡｌＧａＮ層１１６の上に形成される窒化インジウムアルミニウムバリア層１２４と、を含む。【選択図】図１