METHOD OF CHEMICAL MECHANICAL POLISHING SUBSTRATE

PROBLEM TO BE SOLVED: To provide a method of chemical mechanical polishing a substrate that provides a higher degree of planarization while minimizing defect formation.SOLUTION: A method of chemical mechanical polishing a substrate includes steps of providing a substrate, and providing a chemical mechanical polishing pad 10. The chemical mechanical polishing pad 10 comprises: a polishing layer 20 including a polishing surface 14 and having composition selected to exhibit an initial hydrolytic stability together with a sustained hydrolytic instability; a rigid layer 25 having a top surface 26 and a bottom surface 27; a hot melt adhesive 23 interposed between a base surface 17 of the polishing layer 20 and the top surface 26 of the rigid layer 25, and bonding the polishing layer 20 to the rigid layer 25; and a pressure sensitive platen adhesive layer 70 having a stack side and a platen side, where the stack side is adjacent to the bottom surface 27 of the rigid layer 25. The method further includes creating dynamic contact between the polishing surface 20 and the substrate to polish a surface of the substrate. 【課題】欠陥形成を最小限にしながらもより高い程度の平坦化を提供する、基板を化学機械研磨する方法を提供する。【解決手段】基材を化学機械研磨する方法は、基材を提供する工程、研磨面１４を有し、初期加水分解安定性を持続的加水分解不安定性と併せて示すように選択された組成を備える研磨層２０と、上面２６及び下面２７を有する硬質層２５と、研磨層２０のベース面１７と硬質層２５の上面２６との間に挿入された、研磨層２０を硬質層２５に接着するホットメルト接着剤２３と、スタック側及びプラテン側を有する感圧プラテン接着剤層７０であって、スタック側が硬質層２５の下面２７に隣接する感圧プラテン接着剤層７０とを含む化学機械研磨パッド１０を提供する工程、及び研磨面２０と基材との間に動的接触を生じさせて基材の表面を研磨する工程を含む。【選択図】図２