CHEMICAL MECHANICAL POLISHING PAD

PROBLEM TO BE SOLVED: To provide chemical mechanical polishing pads that exhibit an appropriate balance of properties that provides a degree of planarization while minimizing defect formation.SOLUTION: A chemical mechanical polishing pad comprises: a polishing layer 20; a rigid layer 25; and a hot m...

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Hauptverfasser:	MICHELLE K JENSEN, JAMES MURNANE, MARTY DEGROOT, STRING DARRELL, YEH FENGJI, MOHAMMAD T ISLAM, JOHN G NOWLAND, MATTHEW RICHARD VAN HANEHEM, QIAN BAINIAN, JEFFREY JAMES HENDRON
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide chemical mechanical polishing pads that exhibit an appropriate balance of properties that provides a degree of planarization while minimizing defect formation.SOLUTION: A chemical mechanical polishing pad comprises: a polishing layer 20; a rigid layer 25; and a hot melt adhesive 23 bonding the polishing layer to the rigid layer. The polishing layer exhibits: a specific gravity greater than 0.6; a Shore D hardness of 60 to 90; an elongation to break of 100 to 300%; and a unique combination of an initial hydrolytic stability and a sustained hydrolytic instability. 【課題】欠陥形成を最小限にしながらも平坦化の程度を提供する性質の適切なバランスを示す化学機械研磨パッドを提供する。【解決手段】研磨層２０、硬質層２５及び研磨層を硬質層に接着するホットメルト接着剤２３を含み、研磨層が、０．６よりも高い比重、６０〜９０のショアＤ硬さ、１００〜３００％の破断点伸び及び初期加水分解安定性と持続的加水分解不安定性との独自の組み合わせを示す。【選択図】図１