METHOD OF MANUFACTURING CUBIC BORON NITRIDE FILM AND CUBIC BORON NITRIDE FILM

PROBLEM TO BE SOLVED: To provide a method of manufacturing a single phase cubic boron nitride film capable of forming each single phase film having a cubic structure or a hexagonal structure and having high crystal quality without being peeled from a substrate.SOLUTION: The method of manufacturing a single phase cubic boron nitride film comprises a step of supplying N, B and rare gas ions on a substrate heated at 400 to 1300°C and forming a boron nitride film. A raw material of N is both of nitrogen atom radicals generated by a RF radical source and nitrogen-molecule ions generated by a RF ion source or only the nitrogen atom radicals, a raw material of B is metal boron, and the rare gas ions are ions of Ar, etc., generated by the RF ion source. A ratio (a V/III ratio) of N to B reaching to the substrate per unit time is 0.6 or more, the momentum of the rare gas ions applied per the film 1B is 10 to 600(eV*amu), and when the V/III ratio is r and the momentum applied per 1B is m, a relation of r>-0.1m+2.3 is satisfied. 【課題】立方晶構造と六方晶構造それぞれの単相膜を作製でき、基板からの剥離がなく、結晶の品質が高い単相立方晶窒化ホウ素薄膜を製造する方法の提供。【解決手段】４００〜１３００℃に加熱された基板上に、ＮとＢと希ガスイオンとを供給し、窒化ホウ素薄膜を形成する。Ｎは、RFラジカルソースで生成した窒素原子ラジカルとRFイオンソースで生成した窒素分子イオンとの両方、または窒素原子ラジカルのみを原料とし、Ｂは金属ホウ素を原料とし、希ガスイオンはRFイオンソースで生成されたAr等のイオンであり、単位時間あたりに基板に到達するＮとＢの比(V/III比)が0.6以上であり、かつ希ガスイオンが膜の1Ｂに当りに与える運動量が10-600(eV*amu)1/2であり、かつV/III比をr、1Ｂ当りに加わる運動量をmとすると、r＞-0.1m+2.3を満たす単相立方晶窒化ホウ素薄膜の製造方法。【選択図】図３