ELECTROCHEMICAL METHOD FOR PRODUCING SILICON FILM

PROBLEM TO BE SOLVED: To provide a method for producing a thin silicon film that easily produces a thin silicon film to be used in a semiconductor, a solar cell, a secondary battery, or the like, in a less number of steps and at a lower cost compared with a conventional process, and can thus enhance...

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Bibliographische Detailangaben
Hauptverfasser:	PARK TAE-HONG, BAE SANG EUN, KIM JONG-YUN, CHO YOUNG HWANG, HA YEONG-KEONG, KIM DAE HYEON, PARK YONG JOON, SONG KYUSEOK, YEON JEI WON
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for producing a thin silicon film that easily produces a thin silicon film to be used in a semiconductor, a solar cell, a secondary battery, or the like, in a less number of steps and at a lower cost compared with a conventional process, and can thus enhance price competitiveness of a product.SOLUTION: A method for producing a thin silicon film includes a stage where a silicon oxide is applied onto a substrate and sintered to form a thin silicon oxide film, which is electrochemically reduced to form a porous silicon film followed by being resintered. The invention relates to the method for producing a thin silicon film, the thin silicon film produced thereby, and an electronic element having the thin silicon film. 【課題】半導体、太陽電池、二次電池などに使用されるシリコン薄膜を、従来の工程と対比して少ない工程数及び低費用で容易に製造することができるので、製品の価額競争力を高めることができるシリコン薄膜の製造方法を提供する。【解決手段】本発明は、シリコン酸化物を基板に塗布及び焼結してシリコン酸化物薄膜を形成して、これを電気化学的に還元させて多孔性のシリコン膜を形成した後、再焼結する段階を含むシリコン薄膜の製造方法、これにより製造されたシリコン薄膜、上記のシリコン薄膜を含む電子素子に関するものである。【選択図】図１