ALUMINIUM NITRIDE SINTERED COMPACT, AND WAFER MOUNTING TABLE FOR PRODUCTION OR INSPECTION OF SEMICONDUCTOR, USING THE SAME

PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact which does not cause insulation breakdown during heating because it has a low volume resistivity at a high temperature, and thereby prevents a heater from being broken or being extremely shortened in life.SOLUTION: The aluminum nitride sintered compact is suitably used between a plurality of electric circuits of a wafer mounting table which is used for the production or the inspection of a semiconductor, and in which the plurality of electric circuits are buried. The aluminum nitride sintered compact has a carbon content of 0.005-0.05 mass%, a sintering density of 3.20 g/cmor more, a volume resistivity at 500°C of 1×10 cm or more, and a color tone b value according to JIS Z8730 of 7.0 or less. 【課題】 高温での体積抵抗率が低いために加熱中に絶縁破壊を起こしてヒータが破損したり、寿命が極端に短くなったりすることのない窒化アルミニウム焼結体を提供する。【解決手段】 複数の電気回路が埋設された半導体製造用または半導体検査用のウェハ載置台の当該複数の電気回路の間に好適に使用される窒化アルミニウム焼結体であって、カーボンの含有量が０.００５〜０.０５質量％、焼結密度が３.２０ｇ／ｃｍ３以上、５００℃における体積抵抗率が１?１０７ ・ｃｍ以上、ＪＩＳ Ｚ８７３０に準じた色相ｂ値が７.０以下である。【選択図】 なし