NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device having high reliability.SOLUTION: A nonvolatile semiconductor storage device of an embodiment comprises: a plurality of first semiconductor regions arranged at a distance from each other; a plurality of control gate electrodes which are provided on an upper side of the plurality of first semiconductor regions and arranged at a distance from each other; a selection gate electrode which is provided on an upper side of the plurality of first semiconductor regions and arranged at a distance from the control gate electrode lying on the outermost side of the plurality of control gate electrodes; charge storage layers each of which is provided on a position where each of the plurality of first semiconductor regions and each of the plurality of control gate electrodes intersects with each other and a part of a side wall of each charge storage layer is exposed to an air gap between neighboring first semiconductor regions; and a first insulation layer which covers the plurality of control gate electrodes and the selection gate electrode, and is provided above side walls of the selection gate electrode across an air gap, in which parts each bridged between the control gate electrodes project toward the air gap between the control gate electrodes. 【課題】信頼性の高い不揮発性半導体記憶装置を提供する。【解決手段】実施形態の不揮発性半導体記憶装置は、空隙を隔てて配列された複数の第１半導体領域と、複数の第１半導体領域の上側に設けられ、それぞれが空隙を隔てて配列された複数の制御ゲート電極と、複数の第１半導体領域の上側に設けられ、複数の制御ゲート電極中の最も外側に位置する制御ゲート電極に空隙を隔てて並んだ選択ゲート電極と、複数の第１半導体領域のそれぞれと複数の制御ゲート電極のそれぞれとが交差する位置に設けられ、その側壁の一部が隣り合う第１半導体領域の間の空隙に露出された電荷蓄積層と、複数の制御ゲート電極および選択ゲート電極を覆うとともに、選択ゲート電極の側壁の上に空隙を介して設けられ、複数の制御ゲート電極のそれぞれの間に架設された部分が複数の制御ゲート電極のそれぞれの間の空隙に向かって突出している第１絶縁層と、を備える。【選択図】図１