PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
PROBLEM TO BE SOLVED: To provide a plasma processing device and method that can prevent generation of an adhesion film to a stage disposed in a chamber of a plasma processing device with a simple construction.SOLUTION: A dry etching device 1 has a feeding carrier 5 comprising a holding sheet 6 for h...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng ; jpn |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a plasma processing device and method that can prevent generation of an adhesion film to a stage disposed in a chamber of a plasma processing device with a simple construction.SOLUTION: A dry etching device 1 has a feeding carrier 5 comprising a holding sheet 6 for holding a wafer and an annular frame 7, and an upward and downward movable cover 33. The cover 33 is movable to a descending position at which the cover 33 covers the feeding carrier 5 mounted on a stage 14. At the descending position, a contact face 33f at the tip of a cover side projecting portion 33g provided to the outer peripheral portion of a main body 33a of the cover 33 comes into contact with a contact face 22b provided to an exterior part 22B of the stage 14. Heat of the cover 33 caused by exposure to plasma is radiated through this contact, and the temperature of the stage 14 increases.
【課題】プラズマ処理装置のチャンバー内が配置されたステージへの付着膜の生成を簡易な構成で防止する方法を提供する。【解決手段】ドライエッチング装置1は、ウエハを保持した保持シート6と環状フレーム7とからなる搬送キャリア5と、昇降可能なカバー33を備える。カバー33はステージ14に載置された搬送キャリア5を覆う降下位置に移動できる。降下位置では、カバー33の本体33aの外周部に設けられたカバー側突部33gの先端の接触面33fは、ステージ14の外装部22Bに設けられた接触面22bに接触する。この接触を介してプラズマに曝されることによるカバー33の熱がステージ14に放熱され、ステージ14が昇温する。【選択図】図1 |
---|