PLASMA PROCESSING APPARATUS, ABNORMAL OSCILLATION DETERMINATION METHOD, AND HIGH-FREQUENCY GENERATOR

PROBLEM TO BE SOLVED: To appropriately determine abnormal oscillation of a high-frequency oscillator.SOLUTION: A plasma processing apparatus according to one embodiment, comprises: a processing container; a plasma generation mechanism having a high-frequency oscillator and generating a plasma in the...

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Hauptverfasser: HASHIMOTO YUNOSUKE, FUNASAKI KAZUNORI, KANEKO KAZUFUMI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To appropriately determine abnormal oscillation of a high-frequency oscillator.SOLUTION: A plasma processing apparatus according to one embodiment, comprises: a processing container; a plasma generation mechanism having a high-frequency oscillator and generating a plasma in the processing container by using a high frequency wave oscillated by the high-frequency oscillator; an impedance regulator regulating an impedance given to the high-frequency oscillator; and a determination part changing the impedance regulated by the impedance regulator, and determining abnormal oscillation of the high-frequency oscillator on the basis of a component at the central frequency of a fundamental wave that is a high frequency wave oscillated by the high-frequency oscillator in a state that the impedance is changed, and a component at peripheral frequencies existing at both ends of a predetermined frequency band using the central frequency of the fundamental wave as a center. 【課題】高周波発振器の異常発振を適切に判断すること。【解決手段】プラズマ処理装置は、1つの実施態様において、処理容器と、高周波発振器を有し、該高周波発振器によって発振される高周波を用いて処理容器内にプラズマを発生させるプラズマ発生機構と、高周波発振器に付与されるインピーダンスを調整するインピーダンス調整器と、インピーダンス調整器によって調整されるインピーダンスを変更し、インピーダンスが変更された状態で高周波発振器によって発振される高周波である基本波の中心周波数の成分と、基本波の中心周波数を中心とする所定の周波数帯域の両端に存在する周辺周波数の成分とに基づいて、高周波発振器の異常発振を判断する判断部とを備えた。【選択図】図3