SPUTTERING TARGET JOINT BODY AND FILM DEPOSITION METHOD USING THE SAME

PROBLEM TO BE SOLVED: To provide a joint body of a sputtering target and a backing plate, capable of effectively reducing the generation of particles during sputtering from the initial stage to the last stage of a target lifetime and simply obtained, and a film deposition method using the same.SOLUT...

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Bibliographische Detailangaben
Hauptverfasser:	UNNO TAKAHIRO, SHIBAYAMA TAKASANE
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a joint body of a sputtering target and a backing plate, capable of effectively reducing the generation of particles during sputtering from the initial stage to the last stage of a target lifetime and simply obtained, and a film deposition method using the same.SOLUTION: In a sputtering target joint body having a sputtering target 1 joined with a backing plate 2 for holding the sputtering target, both the sputtering target 1 and the backing plate 2 are sintered bodies and are constituted of a dielectric body having a relative dielectric constant of 2-1500. 【課題】スパッタリングの際のパーティクルの発生をターゲットの寿命の初期から末期を通じて効果的に低減することができ、かつ、簡便に得ることができるスパッタリングターゲットとバッキングプレートの接合体及びこれを用いた成膜方法を提供する。【解決手段】スパッタリングターゲット１にこれを保持するバッキングプレート２が接合されたスパッタリングターゲット接合体において、スパッタリングターゲット１及びバッキングプレート２のいずれも、焼結体であり、かつ、比誘電率が２〜１５００である誘電体により構成する。【選択図】図１