MANUFACTURING METHOD OF GRAPHENE TRANSPARENT CONDUCTIVE FILM AND GRAPHENE TRANSPARENT CONDUCTIVE FILM MANUFACTURED THEREWITH

PROBLEM TO BE SOLVED: To provide a technique solving problems of graphene film formation with traditional thermal CVD or resin carbonization, without using carbon content gas such as methane, forming graphene at low temperature in a short time, and controlling a number of layers.SOLUTION: By making...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KATO RYUICHI, TSUGAWA KAZUO, HASEGAWA MASATAKA, ISHIHARA MASANORI, YAMADA TAKATOSHI, OKIKAWA YUKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CABLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY INSULATORS METALLURGY NON-METALLIC ELEMENTS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a technique solving problems of graphene film formation with traditional thermal CVD or resin carbonization, without using carbon content gas such as methane, forming graphene at low temperature in a short time, and controlling a number of layers.SOLUTION: By making a very small amount of carbon contained in a metal substrate precipitate on the surface of the substrate by heating, and by plasma treatment using hydrogen gas under decompression, graphene grows on the substrate surface, and a graphene transparent conductive film is provided. 【課題】従来の熱ＣＶＤおよび樹脂炭化法によるグラフェン成膜の課題を解決し、メタンガスなどの炭素含有ガスを使用することなく、より低温で短時間にグラフェンを形成し、かつ層数を制御する手法を提供する。【解決手段】金属製基材内部に含まれる微量の炭素を加熱により基材表面に析出させ、さらに減圧下において水素ガスを用いたプラズマ処理を行うことにより、該基材表面にグラフェンを成長させてグラフェン透明導電膜を得る。【選択図】なし