SOLDERING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a soldering method via a nickel plating layer enabling a void generation rate to be reduced, and to provide a method of manufacturing a semiconductor device by using the soldering method.SOLUTION: By preliminarily heating a copper base plate 1 having a nickel plating...

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1. Verfasser: ISO AKIYOSHI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a soldering method via a nickel plating layer enabling a void generation rate to be reduced, and to provide a method of manufacturing a semiconductor device by using the soldering method.SOLUTION: By preliminarily heating a copper base plate 1 having a nickel plating layer 2 in an inert gas atmosphere in a temperature range of 300-400°C, the void generation rate can be reduced in soldering between the copper base plate and an insulation circuit board 8. 【課題】ボイド発生率を低減できるニッケルめっき層を介したはんだ付け方法およびこのはんだ付け方法を用いた半導体装置の製造方法を提供する。【解決手段】ニッケルめっき層2を有する銅ベース板1を予め、不活性ガス雰囲気中で300℃〜400℃の温度範囲で加熱することで、銅ベース板と絶縁回路基板8のはんだ付けでボイド発生率を低減することができる。【選択図】 図5