PHOTOVOLTAIC POWER GENERATION MODULE

PHOTOVOLTAIC POWER GENERATION MODULE

PROBLEM TO BE SOLVED: To provide a photovoltaic power generation module that is strong against change in a sunshine amount.SOLUTION: A photovoltaic power generation module comprises: a semiconductor layer generating power by an infrared ray having a wavelength of 1500 nm or less; and a power storage...

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Hauptverfasser: KATAOKA YOSHINORI, KADOSHIMA KUNIYUKI, OZU HIDEYUKI, SASAKI RYOTO, IWAI HIROSHI, LI WEI
Format: Patent
Sprache:eng ; jpn
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KATAOKA YOSHINORI
KADOSHIMA KUNIYUKI
OZU HIDEYUKI
SASAKI RYOTO
IWAI HIROSHI
LI WEI
description PROBLEM TO BE SOLVED: To provide a photovoltaic power generation module that is strong against change in a sunshine amount.SOLUTION: A photovoltaic power generation module comprises: a semiconductor layer generating power by an infrared ray having a wavelength of 1500 nm or less; and a power storage mechanism part storing a part or all of power supplied from the semiconductor layer generating power by the infrared ray. In addition, it is preferred that the semiconductor layer generating power by an infrared ray having a wavelength of 1100 nm or more comprises a -iron silicide layer or a barium silicide layer. 【課題】 日照量の変化に強い太陽光発電モジュールを提供する。【解決手段】 実施の形態の太陽光発電モジュールは、波長１５００ｎｍ以下の赤外線により発電する半導体層と、前記赤外線により発電する半導体層から供給される電力の一部または全部を蓄電する蓄電機構部、とを具備することを特徴とするものである。また、波長１１００ｎｍ以上の赤外線により発電する半導体層はβ−鉄シリサイド層またはバリウムシリサイド層を具備していることが好ましい。【選択図】 図１
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2014212170A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2014212170A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2014212170A3</originalsourceid><addsrcrecordid>eNrjZFAJ8PAP8Q_z9wlx9HRWCPAPdw1ScHf1cw1yDPH091Pw9XcJ9XHlYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBoYmRoZGhuYGjsZEKQIA4Xojog</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PHOTOVOLTAIC POWER GENERATION MODULE</title><source>esp@cenet</source><creator>KATAOKA YOSHINORI ; KADOSHIMA KUNIYUKI ; OZU HIDEYUKI ; SASAKI RYOTO ; IWAI HIROSHI ; LI WEI</creator><creatorcontrib>KATAOKA YOSHINORI ; KADOSHIMA KUNIYUKI ; OZU HIDEYUKI ; SASAKI RYOTO ; IWAI HIROSHI ; LI WEI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a photovoltaic power generation module that is strong against change in a sunshine amount.SOLUTION: A photovoltaic power generation module comprises: a semiconductor layer generating power by an infrared ray having a wavelength of 1500 nm or less; and a power storage mechanism part storing a part or all of power supplied from the semiconductor layer generating power by the infrared ray. In addition, it is preferred that the semiconductor layer generating power by an infrared ray having a wavelength of 1100 nm or more comprises a -iron silicide layer or a barium silicide layer. 【課題】 日照量の変化に強い太陽光発電モジュールを提供する。【解決手段】 実施の形態の太陽光発電モジュールは、波長１５００ｎｍ以下の赤外線により発電する半導体層と、前記赤外線により発電する半導体層から供給される電力の一部または全部を蓄電する蓄電機構部、とを具備することを特徴とするものである。また、波長１１００ｎｍ以上の赤外線により発電する半導体層はβ−鉄シリサイド層またはバリウムシリサイド層を具備していることが好ましい。【選択図】 図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20141113&amp;DB=EPODOC&amp;CC=JP&amp;NR=2014212170A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20141113&amp;DB=EPODOC&amp;CC=JP&amp;NR=2014212170A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KATAOKA YOSHINORI</creatorcontrib><creatorcontrib>KADOSHIMA KUNIYUKI</creatorcontrib><creatorcontrib>OZU HIDEYUKI</creatorcontrib><creatorcontrib>SASAKI RYOTO</creatorcontrib><creatorcontrib>IWAI HIROSHI</creatorcontrib><creatorcontrib>LI WEI</creatorcontrib><title>PHOTOVOLTAIC POWER GENERATION MODULE</title><description>PROBLEM TO BE SOLVED: To provide a photovoltaic power generation module that is strong against change in a sunshine amount.SOLUTION: A photovoltaic power generation module comprises: a semiconductor layer generating power by an infrared ray having a wavelength of 1500 nm or less; and a power storage mechanism part storing a part or all of power supplied from the semiconductor layer generating power by the infrared ray. In addition, it is preferred that the semiconductor layer generating power by an infrared ray having a wavelength of 1100 nm or more comprises a -iron silicide layer or a barium silicide layer. 【課題】 日照量の変化に強い太陽光発電モジュールを提供する。【解決手段】 実施の形態の太陽光発電モジュールは、波長１５００ｎｍ以下の赤外線により発電する半導体層と、前記赤外線により発電する半導体層から供給される電力の一部または全部を蓄電する蓄電機構部、とを具備することを特徴とするものである。また、波長１１００ｎｍ以上の赤外線により発電する半導体層はβ−鉄シリサイド層またはバリウムシリサイド層を具備していることが好ましい。【選択図】 図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAJ8PAP8Q_z9wlx9HRWCPAPdw1ScHf1cw1yDPH091Pw9XcJ9XHlYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBoYmRoZGhuYGjsZEKQIA4Xojog</recordid><startdate>20141113</startdate><enddate>20141113</enddate><creator>KATAOKA YOSHINORI</creator><creator>KADOSHIMA KUNIYUKI</creator><creator>OZU HIDEYUKI</creator><creator>SASAKI RYOTO</creator><creator>IWAI HIROSHI</creator><creator>LI WEI</creator><scope>EVB</scope></search><sort><creationdate>20141113</creationdate><title>PHOTOVOLTAIC POWER GENERATION MODULE</title><author>KATAOKA YOSHINORI ; KADOSHIMA KUNIYUKI ; OZU HIDEYUKI ; SASAKI RYOTO ; IWAI HIROSHI ; LI WEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2014212170A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KATAOKA YOSHINORI</creatorcontrib><creatorcontrib>KADOSHIMA KUNIYUKI</creatorcontrib><creatorcontrib>OZU HIDEYUKI</creatorcontrib><creatorcontrib>SASAKI RYOTO</creatorcontrib><creatorcontrib>IWAI HIROSHI</creatorcontrib><creatorcontrib>LI WEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KATAOKA YOSHINORI</au><au>KADOSHIMA KUNIYUKI</au><au>OZU HIDEYUKI</au><au>SASAKI RYOTO</au><au>IWAI HIROSHI</au><au>LI WEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTOVOLTAIC POWER GENERATION MODULE</title><date>2014-11-13</date><risdate>2014</risdate><abstract>PROBLEM TO BE SOLVED: To provide a photovoltaic power generation module that is strong against change in a sunshine amount.SOLUTION: A photovoltaic power generation module comprises: a semiconductor layer generating power by an infrared ray having a wavelength of 1500 nm or less; and a power storage mechanism part storing a part or all of power supplied from the semiconductor layer generating power by the infrared ray. In addition, it is preferred that the semiconductor layer generating power by an infrared ray having a wavelength of 1100 nm or more comprises a -iron silicide layer or a barium silicide layer. 【課題】 日照量の変化に強い太陽光発電モジュールを提供する。【解決手段】 実施の形態の太陽光発電モジュールは、波長１５００ｎｍ以下の赤外線により発電する半導体層と、前記赤外線により発電する半導体層から供給される電力の一部または全部を蓄電する蓄電機構部、とを具備することを特徴とするものである。また、波長１１００ｎｍ以上の赤外線により発電する半導体層はβ−鉄シリサイド層またはバリウムシリサイド層を具備していることが好ましい。【選択図】 図１</abstract><oa>free_for_read</oa></addata></record>
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ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PHOTOVOLTAIC POWER GENERATION MODULE
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